期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 37, 期 5, 页码 603-606出版社
SPRINGER
DOI: 10.1007/s11664-007-0373-4
关键词
InN; cathodoluminescence; CL dark spot; infrared; dislocation
The correlation between threading dislocations (TDs) and nonradiative recombination centers in InN films was investigated by infrared cathodoluminescence (CL). Samples were grown on nitridated (0001) sapphire substrates with a low-temperature-grown InN buffer layer by radio frequency molecular-beam epitaxy (RF-MBE). Panchromatic CL images of the InN films showed a high density of dark spots in a range of 10(8) cm(-2) to 10(9) cm(-2). The sample with a higher density of TDs had a higher density of CL dark spots. A depth-dependent CL measurement confirmed that CL dark spots aligned almost vertically in the film like TDs. Reasonable correlation between TDs and the nonradiative regions was also observed by a cross-sectional CL image of the InN film regrown on a microfaceted InN template, in which the TD density was dramatically reduced in part. These results suggest that threading dislocations act as nonradiative recombination centers in InN.
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