期刊
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
卷 162, 期 2, 页码 67-73出版社
ELSEVIER
DOI: 10.1016/j.elspec.2007.09.002
关键词
electronic structure; doped TiO2; X-ray absorption; X-ray emission; X-ray photoelectron
类别
The electronic origins of the visible-light response of N-, C- and S-doped TiO2 have been studied using X-ray absorption, X-ray emission, and X-ray photoelectron spectroscopies. New electronic states are observed in the bulk band gap, above the valence band edge of pure TiO2, which can be directly related to the visible-light absorption of the N-, C- and S-doped TiO2 materials. (C) 2007 Elsevier B.V. All rights reserved.
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