期刊
JOURNAL OF ELECTRON MICROSCOPY
卷 58, 期 3, 页码 185-191出版社
OXFORD UNIV PRESS
DOI: 10.1093/jmicro/dfn026
关键词
STEM; EELS; grain boundary; SrTiO3
类别
Many fundamental problems in materials science, physics, and particular nanotechnology rely on the direct determination and characterization of atomic arrangements and electronic environments of individual interfaces or defects. In this paper, we will show how aberration-corrected Z-contrast imaging in combination with electron energy-loss spectroscopy can be used to directly measure the local atomic and electronic structures of dislocation cores in low-angle SrTiO3 [001] tilt grain boundaries. In particular, we will study two types of dislocation cores in a 3 degrees tilt grain boundary, a pure edge dislocation, and a dissociated dislocation core. While it is energetically favorable for an edge dislocation to dissociate into two partial dislocations in such a low-angle grain boundary, we can find pure edge dislocations that show a higher O vacancy concentration than the dissociated cores. We suggest that the increased oxygen vacancy concentration might help stabilizing the pure edge dislocations in 3 degrees tilt grain boundaries of SrTiO3.
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