期刊
JOURNAL OF ELECTROCERAMICS
卷 23, 期 1, 页码 76-79出版社
SPRINGER
DOI: 10.1007/s10832-008-9538-7
关键词
Transistor; ZnO; Low voltage operation; Gate insulator
资金
- KIST [2E20792]
- Seoul RBD [2G07270]
- Display RD [F0004111]
- Ministry of Knowledge Economy of the Korean Government
- Korea Evaluation Institute of Industrial Technology (KEIT) [F0004060-2009-32] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report on the fabrication of low-voltage ZnO thin-film transistors using 1% Ni-doped Ba0.6Sr0.4TiO3 as the gate insulator. The Ni-doped BST, deposited by RF magnetron sputtering at room temperature, significantly reduced leakage current density to less than 6 x 10(-9) A/cm, as compared to a current density of 5 x 10(-4) A/cm for undoped BST films at 0.5 MV/cm. The ZnO thin-film transistor with the Ni-doped BST gate insulator exhibited a very low operating voltage of 4 V. The field-effect mobility, the current on/off ratio and subthreshold swing were 2.2 cm(2) V/s, 1.2 x 10(6), and 0.21 V/dec respectively.
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