期刊
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
卷 688, 期 -, 页码 243-248出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jelechem.2012.09.025
关键词
Graphene; Electrochemical etching; Clean transfer; Doping effect
资金
- National Science Foundation of China [20973007, 51121091, 51102002, 21173004, 11104003]
- National Basic Research Program of China [2012CB933404, 2011CB921904, 2011CB933003]
- NCET
- SRF for ROCS, SEM
An electrochemical etching technique was developed to achieve a clean and efficient transfer of large-area graphene films grown on copper foils by chemical vapor deposition without degrading the quality of graphene. Clean transfer for continuous graphene films with fewer impurities and unintentional p-type doping in comparison with conventional wet-etching in oxidant solutions was confirmed by optical microscopy, scanning electron microscopy, atomic force microscopy, ultraviolet-visible spectroscopy, and Raman spectroscopy. This electrochemical transfer technique can be scaled up for industrial use and generalized to various substrates by selecting suitable oxidation voltage and electrolytes, which opens the door for the fabrication of large-scale graphene devices with enhanced performance. (C) 2012 Elsevier B.V. All rights reserved.
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