期刊
JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY
卷 7, 期 4, 页码 596-600出版社
SPRINGER SINGAPORE PTE LTD
DOI: 10.5370/JEET.2012.7.4.596
关键词
AFM; Rf magnetron sputtering; SEM; transmittance; XRD; ZnO-SnO2 films
资金
- Basic Science Research Program through the National Research Foundation of Korea(NRF)
- Ministry of Education, Science and Technology [2010-0007697]
- National Research Foundation of Korea [2010-0007697] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
ZnO-SnO2 films were deposited by rf magnetron sputtering using a ZnO-SnO2 (2:1 molar ratio) target. The target was made from a mixture of ZnO and SnO2 powders calcined at 800 degrees C. The working pressure was 1 mTorr, and the rf power was 120 W. The ratio of oxygen to argon (O-2:Ar) was varied from 0% to 10%, and the substrate temperature was varied from 27 degrees C to 300 degrees C. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force spectroscopy (AFM). The ZnO-SnO2 films deposited in O-2:Ar = 10% exhibited resistivity higher than 10(6) Omega cm and transmittance of more than 80% in the visible range.
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