期刊
JOURNAL OF DISPLAY TECHNOLOGY
卷 10, 期 2, 页码 146-150出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2013.2289358
关键词
Light-emitting diodes (LEDs); electron blocking layer (EBL); AlGaN; efficiency droop
资金
- National High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106]
- National Nature Science Foundation [11204360, 61210014]
Staircase electron blocking layer (EBL) is incorporated in InGaN-based blue light-emitting diodes to numerically investigate the efficiency droop mechanism by using the APSYS simulation software. It is found that gradually reducing aluminum (Al) composition in the growth direction of the AlGaN staircase EBL can improve light output power, lower current leakage, and efficiency droop. To the contrary, increasing the Al composition in the staircase EBL along the growth direction will aggravate the electron leakage and efficiency droop. These distinct features are attributed mainly to discrepancy energy band tailoring in the EBL region, and finally different electron blocking efficiency.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据