4.0 Article

360 PPI Flip-Chip Mounted Active Matrix Addressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays

期刊

JOURNAL OF DISPLAY TECHNOLOGY
卷 9, 期 8, 页码 678-682

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2013.2256107

关键词

Active circuits; displays; flip chip; light emitting diodes (LED)

资金

  1. Research Grants Council (RGC) of the Hong Kong Special Administrative Region Government [T23-612/12-R]

向作者/读者索取更多资源

In this paper, we describe the design and fabrication of 360 PPI flip-chip mounted active matrix (AM) addressable light emitting diode on silicon (LEDoS) micro-displays. The LEDoS micro-displays are self-emitting devices which have higher light efficiency than liquid crystal based displays (LCDs) and longer lifetime than organic light emitting diodes (OLEDs) based displays. The LEDoS micro-displays were realized by integrating monolithic LED micro-arrays and silicon-based integrated circuit using a flip-chip bonding technique. The active matrix driving scheme was designed on the silicon to provide sufficient driving current and individual controllability of each LED pixel. Red, green, blue and Ultraviolet (UV) LEDoS micro-displays with a pixel size of 50 m and pixel pitch of 70 m were demonstrated. With a peripheral driving board, the LEDoS micro-display panels were programmed to show representative images and animations.

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