期刊
JOURNAL OF DISPLAY TECHNOLOGY
卷 9, 期 8, 页码 678-682出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2013.2256107
关键词
Active circuits; displays; flip chip; light emitting diodes (LED)
资金
- Research Grants Council (RGC) of the Hong Kong Special Administrative Region Government [T23-612/12-R]
In this paper, we describe the design and fabrication of 360 PPI flip-chip mounted active matrix (AM) addressable light emitting diode on silicon (LEDoS) micro-displays. The LEDoS micro-displays are self-emitting devices which have higher light efficiency than liquid crystal based displays (LCDs) and longer lifetime than organic light emitting diodes (OLEDs) based displays. The LEDoS micro-displays were realized by integrating monolithic LED micro-arrays and silicon-based integrated circuit using a flip-chip bonding technique. The active matrix driving scheme was designed on the silicon to provide sufficient driving current and individual controllability of each LED pixel. Red, green, blue and Ultraviolet (UV) LEDoS micro-displays with a pixel size of 50 m and pixel pitch of 70 m were demonstrated. With a peripheral driving board, the LEDoS micro-display panels were programmed to show representative images and animations.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据