Characterization of homoepitaxial β-Ga2O3 films prepared by metal-organic chemical vapor deposition

beta-Ga2O3 films have been homoepitaxially deposited on beta-Ga2O3 (1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) method. The influences of different growth temperatures on the structure, Raman and optical properties of the homoepitaxial films have been studied. The structure of the obtained films is monoclinic beta phase gallium oxide and the film deposited at 650 degrees C exhibits the best crystalline quality. The average transmittance of the samples in the visible and UV wavelength range is about 80%. The optical band gap of the films deposited at 600, 650 and 700 degrees C are about 4.72, 4.73 and 4.68 eV. respectively. (C) 2014 Elsevier B.V. All rights reserved.