期刊
JOURNAL OF CRYSTAL GROWTH
卷 390, 期 -, 页码 24-29出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2013.12.033
关键词
Chloride-based; Al CVD; BL Methane; Silicon carbide; SiC
资金
- Knut and Alice Wallenberg foundation
- Foundation for Strategic Research (SSF)
- Swedish Research Council
It is generally considered that methane is not a suitable carbon precursor for growth of silicon carbide (SiC) epitaxial layers by Chemical Vapor Deposition (CVD) since its use renders epitaxial layers with very high surface roughness. In this work we demonstrate that in fact SiC epitaxial layers with high-quality morphology can be grown using methane. It is shown that a key factor in obtaining high-quality material is tuning the C/Si ratio of the process gas mixture to a region where the growth is limited neither by carbon nor by silicon supplies. From the growth characteristics presented here, we argue that the reactivity of methane with the SiC surface is much higher than generally assumed in SiC CVD modeling today. (C) 2013 Elsevier B.V. All rights reserved.
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