4.4 Article

High quality crack-free GaN film grown on si (111) substrate without AlN interlayer

期刊

JOURNAL OF CRYSTAL GROWTH
卷 407, 期 -, 页码 58-62

出版社

ELSEVIER
DOI: 10.1016/j.jcrysgro.2014.08.025

关键词

Stresses; Substrates; Metalorganic chemical vapor deposition; Gallium compounds; Nitrides; Semiconducting III-V materials

资金

  1. National Natural Science Foundation of China [51172079]
  2. Science and Technology Program of Guangdong province, China [2010B090400456, 2009B011100003, 2010A081002002]
  3. Science and Technology Program of Guangzhou City, China [2010U1-D00191, 11A52091257]
  4. National High Technology Research and Development Programs of China [2013AA03A101]
  5. Program for Changjiang Scholars and Innovative Research Team in University [IRT13064]

向作者/读者索取更多资源

High quality crack-free GaN film has been grown on 2 in. n-type Si (1 1 1) substrate without AlN interlayers by metalorganic chemical vapor deposition (MOCVD). By using a two-step-pressure growth technique for the AlN buffer layer, we have obtained crack-free 1.8 mu m thick continuous GaN layer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results indicate that the two-step-pressure growth method can improve the crystalline quality of the GaN film by prolonging the three-dimensional (3D) growth process of the GaN layer, Raman spectrum analysis shows that tensile stress in the overlaying GaN layer can be reduced obviously to 0.62 GPa, which helps to reduce the possibility of cracking. (C) 2014 Elsevier B.V. All rights reserved.

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