期刊
JOURNAL OF CRYSTAL GROWTH
卷 369, 期 -, 页码 14-20出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2013.01.031
关键词
QECS; Wulff plot; HVPE; GaN
资金
- NSF [0906805]
- Solid State Lighting and Energy Center (SSLEC) at UCSB
- Direct For Mathematical & Physical Scien [0906805] Funding Source: National Science Foundation
- Division Of Materials Research [0906805] Funding Source: National Science Foundation
In this paper we demonstrate work on developing the kinetic Wulff plots and quasi-equilibrium crystal shapes of GaN by hydride vapor phase epitaxy to understand the stable polar, semipolar, and nonpolar planes that emerge naturally from the GaN crystal. High quality bulk m-plane GaN substrates were masked with circular openings to perform selective area growth studies. Growths were performed by hydride vapor phase epitaxy over a range of temperatures, pressures and carrier gases. The quasi-equilibrium crystal shapes were shown to have clear m-plane {1 (1) over bar 00} facets and a sharp and flat (000 (1) over bar) N-face or c- face. The (0001) Ga-face or c+ face became faceted with {10 (1) over bar1} planes emerging with reduced pressures and temperatures. Based on the stable facets, kinetic Wulff plots were constructed. (C) 2013 ElsevierB.V. All rights reserved.
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