期刊
JOURNAL OF CRYSTAL GROWTH
卷 377, 期 -, 页码 192-196出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2013.05.024
关键词
Directional solidification; Impurities; Purification; Segregation; Semiconducting silicon; Solar cells
资金
- JSPS
Solidification refining of Si using Si-Sn solvent was investigated with the aim of developing a new Si refining process to produce solar grade silicon (SOG-Si). Bulk Si crystals were grown by directional solidification of Sn-Si alloys containing 50, 70, and 95.8 mol% Si. The conditions to grow bulk Si crystals from Si-Sn melts were consistent with the constitutional supercooling criterion, and the growth process was confirmed to be controlled by the diffusion of Si for the present growth conditions. Purification testing of the refined Si showed that more than 98% of metallic impurities, over 60% of B and over 70% of P are removed. (c) 2013 Elsevier B.V. All rights reserved.
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