期刊
JOURNAL OF CRYSTAL GROWTH
卷 380, 期 -, 页码 85-92出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2013.05.039
关键词
Al heavy doping; Crystal morphology; Crystal structure; Hot-wall CVD; 4H-SiC
资金
- Japan Society for the Promotion of Science (JSPS)
Heavily Al-doped 4H-SiC thick epi layers (similar to 90 mu m) were grown on 3-in n(+) 4H-SiC wafers by using the hot-wall CVD method. On the purpose of enhancing incorporated Al-dopant concentration, the growth condition dependence of the Al incorporation behavior in the heavy doping range near Al solubility limit in 4H-SiC was investigated by varying the growth parameters, i.e., growth rate, pressure, temperature and Al-dopant source flow rate. A series of thick epilayers possessing Al-dopant concentration from 9.6 x 10(19) to 4.7 x 10(2) cm(-3) were obtained. Among them, the epilayer with Al-dopant concentration of 3.5 x 10(20) cm(-3) demonstrates a comparably low resistivity of 16.5 m Omega cm as that of commercial n(+) 4H-SiC wafer. The incorporated Al-dopant concentration dependences on surface morphology, crystalline quality and crystal structures of the heavily Al-doped thick epilayers on n(+) 4H-SiC substrates were characterized and discussed. (C) 2013 Elsevier B.V. All rights reserved.
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