期刊
JOURNAL OF CRYSTAL GROWTH
卷 381, 期 -, 页码 139-143出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2013.07.025
关键词
Crystal morphology; Chemical vapor deposition processes; Inorganic compounds; Semiconducting silicon compounds
资金
- Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society under New Energy and Industrial Technology Development Organization (NEDO)
Epitaxial layers on a 150-mm-diameter silicon carbide wafer have been grown using a horizontal hotwall chemical vapor deposition system for three 150-mm-diameter wafers. We investigated the surface morphology and surface defects such as shallow pits and triangular defects of the grown epitaxial layers, as well as the thickness and carrier concentration uniformities. The shallow pit and triangular defect densities were 4.6 cm(-2) and 1.6 cm(-2), respectively, and the thickness and the carrier concentraiton uniformities were 3.9% and 47%, respectively. We focused on improving the carrier concentration distribution for practical use and concluded that the cause of the distribution was the distribution in the effective C/Si ration in the direction of the gas flow. (C) 2013 Elsevier B.V. All rights reserved.
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