期刊
JOURNAL OF CRYSTAL GROWTH
卷 378, 期 -, 页码 511-514出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2012.12.076
关键词
Low dimensional structures; Magnetic fields; Semiconducting III-V materials; Field effect transistors
We report the fabrication and the characterization of a transistor based on modulation-dope (delta-dope) InAs/InP core shell nanowire which was grown on InAs (111) substrate by VLS techniques using MBE. The mobility of the core shell nanowire was 13,600 cm(2)/Vs at room temperature, which is approximately 7-fold increase comparing to the simple InAs nanowire. Estimated mobility at V-ds=0.1 V increased from 13,600 cm(2)/Vs at RT to 15,600 cm(2)/Vs at low temperature. A gate voltage dependent crossover from weak-localization to weak-antilocalization was observed. We extracted the spin relaxation length and coherence length using a quasi-one-dimensional model of the conductance. The effectiveness of the InP shell passivation was confirmed. (c) 2013 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据