期刊
JOURNAL OF CRYSTAL GROWTH
卷 338, 期 1, 页码 107-110出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2011.10.040
关键词
Atomic-Force Microscopy; Growth Models; Segregation; Molecular-Beam Epitaxy; Bismuth Compounds; Semiconducting III-V Materials
资金
- U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division [AC36-08G028308]
The growth of GaAsBi alloys is plagued by the appearance of Bi droplets due to excess Bi that accumulates during growth. Here we present an alternate growth regime that kinetically limits the amount of Bi on the surface, eliminating Bi droplets for a wide range of Bi compositions, while yielding atomically smooth surfaces. Growth rate plays a major role in the amount of Bi that accumulates on the surface, with high growth rates and low Bi fluxes leading to less surface Bi. A balance can be achieved between low Bi coverage, the resultant rough surfaces, and the excessive Bi coverage that leads to Bi droplets. Bi incorporation in this growth regime is linear with Bi flux and scales inversely with growth rate. Unlike previous studies, there is no sign of saturating Bi incorporation with increasing Bi flux, allowing for intuitive prediction and control of Hi content in this regime. (C) 2011 Published by Elsevier B.V.
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