期刊
JOURNAL OF CRYSTAL GROWTH
卷 345, 期 1, 页码 16-21出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2012.01.049
关键词
Molecular beam epitaxy; Semiconducting silicon compounds; Solar cells
资金
- Japan Science and Technology Agency (JST/CREST)
- IBEC Innovation Platform, AIST, Japan
- Grants-in-Aid for Scientific Research [23860011] Funding Source: KAKEN
An attempt was made to grow BaSi2 epitaxial films on Si(001) substrates using molecular beam epitaxy. The structure and morphology of the films were investigated using reflection high-energy electron diffraction, X-ray diffraction, electron backscatter diffraction, atomic force microscopy, and transmission electron microscopy. The BaSi2 film grown was a-axis oriented, despite a large lattice mismatch. The measurements indicated that there are two possible epitaxial relationships of BaSi2(100)//Si(001) with BaSi2[010]//Si[110] and BaSi2[001]//Si[110], due to the fourfold symmetry of Si(001). X-ray reciprocal space mapping revealed that the BaSi2 film was almost strain-free. Plan-view transmission electron microscopy clarified the grain size and the existence of grain boundaries in the BaSi2 film. (c) 2012 Elsevier B.V. All rights reserved.
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