期刊
JOURNAL OF CRYSTAL GROWTH
卷 348, 期 1, 页码 75-79出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2012.03.044
关键词
Molecular beam epitaxy; Semiconductor silicon compounds
资金
- Japan Science and Technology Agency (JST/CREST)
a-Axis-oriented undoped n-BaSi2 epitaxial films were grown on Si(111) substrates by molecular beam epitaxy, and the crystalline quality and grain boundaries were investigated by means of reflection high-energy electron diffraction, X-ray diffraction, and transmission electron microscopy (TEM). The grain size of the BaSi2 films was estimated to be approximately 0.1-0.3 mu m, and straight grain boundaries (GBs) were observed in the plan-view TEM images. Dark-field TEM images under a two-beam diffraction condition showed that these GBs consist mostly of BaSi2 {011} planes. The diffusion length of minority carriers in n-BaSi2 was found to be approximately 10 mu m by an electron-beam-induced current technique. (C) 2012 Elsevier B.V. All rights reserved.
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