期刊
JOURNAL OF CRYSTAL GROWTH
卷 357, 期 -, 页码 48-52出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2012.07.034
关键词
Computational thermodynamics; High temperature chemical vapor deposition; SiC; Tetramethylsilane
资金
- World Premier Materials (WPM) Program
- Ministry of Knowledge Economy (MIKE), Korea
Tetramethylsilane (TMS) is commonly used as a precursor in the production of SiC(beta) films at relatively low temperatures. However, because TMS contains much more C than Si, it is difficult to produce solid phase SiC at high temperatures. In an attempt to develop a more efficient TMS-based SiC(alpha) process, computational thermodynamic simulations were performed under various temperatures, working pressures and TMS/H-2 ratios. The findings indicate that each solid phase has a different dependency on the H-2 concentration. Consequently, a high H-2 concentration results in the formation of a single, solid phase SiC region at high temperatures. Finally, TMS appears to be useful as a precursor for the high temperature production of SiC(alpha). (C) 2012 Elsevier B.V. All rights reserved.
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