期刊
JOURNAL OF CRYSTAL GROWTH
卷 355, 期 1, 页码 166-170出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2012.06.052
关键词
Molecular beam epitaxy; Oxides; Perovskites; Gadolinium compounds
资金
- U.S. National Science Foundation [DMR-1006640]
- MRSEC Program of the National Science Foundation [DMR 1121053]
- Center for Energy Efficient Materials
- DOE [DESC0001009]
- MURI program of the Army Research Office [W911-NF-09-1-0398]
- Department of Defense through a NDSEG fellowship
- UCSB Materials Research Laboratory
- NSF-funded MRSEC [DMR-1121053]
- Direct For Mathematical & Physical Scien [1006640] Funding Source: National Science Foundation
- Division Of Materials Research [1006640] Funding Source: National Science Foundation
The paper reports on the thin film growth of a protoptype Mott insulator, ferrimagnetic GdTiO3, using shuttered molecular beam epitaxy. Substrates were (001) (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) (LSAT), with and without epitaxial SrTiO3 buffer layers, respectively. It was found that on bare LSAT, the starting monolayer was crucial for stabilizing the GdTiO3 perovskite phase. The quality of the films was evaluated using structural, electric, optical and magnetic characterization. Structural characterization showed that the GdTiO3 layers were free of pyrochlore impurity phases and that the lattice parameter was close to what was expected for coherently strained, stoichiometric GdTiO3. The room temperature film resistivity was 7 Omega cm and increased with decreasing temperature, consistent with Mott insulating characteristics. The Curie temperature was 30 K and a small coercivity was observed at 2 K, in good agreement with bulk GdTiO3 properties reported in the literature. (C) 2012 Elsevier B.V. All rights reserved.
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