High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

We report on a growth of AlN at reduced temperatures of 1100 degrees C and 1200 degrees C in a horizontal-tube hotwall metalorganic chemical vapor deposition reactor configured for operation at temperatures of up to 1500-1600 degrees C and using a joint delivery of precursors. We present a simple route as viewed in the context of the elaborate multilayer growth approaches with pulsed ammonia supply for the AlN growth process on SiC substrates at the reduced temperature of 1200 C. The established growth conditions in conjunction with the particular in-situ intervening SiC substrate treatment are considered pertinent to the accomplishment of crystalline, relatively thin, similar to 700 nm, single AlN layers of highquality. The feedback is obtained from surface morphology, cathodoluminescence and secondary ion mass spectrometry characterization. (C) 2011 Elsevier B.V. All rights reserved.