Transmission electron microscopy investigation of AlN growth on Si(111)

AlN layers with a thickness of 250 nm were grown by plasma-assisted gas source molecular-beam epitaxy on Si(111) at substrate temperatures between 600 degrees C and 900 degrees C. The surface morphology and microstructure of the AlN layers were analyzed by scanning and transmission electron microscopy. Different defect types are observed in the AlN layers and at the AlN/Si(111) interfaces as a function of the temperature: inclusions of pure Al in the Si-substrate, crystallites of the cubic AlN phase, dislocations, stacking faults and inversion domain boundaries. The formation and concentration of the defects depends strongly on the substrate temperature during the growth. X-ray diffraction rocking curves for the (0002) reflection yield minimum full width at half maximum values for the sample grown at the 900 degrees C under Al-rich conditions indicating optimum structural quality. However, the discussion of the entity of defects will show that a more differentiated view is required to assess the overall quality of the AlN layers. (C) 2011 Elsevier B.V. All rights reserved.