期刊
JOURNAL OF CRYSTAL GROWTH
卷 335, 期 1, 页码 94-99出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2011.09.004
关键词
Growth from solution; Top seeded solution growth; Liquid phase epitaxy; Semiconducting silicon compounds
资金
- NEDO
- JSPS
- MAE
- Grants-in-Aid for Scientific Research [10J08543] Funding Source: KAKEN
We recently achieved heteroepitaxial growth of high-quality 3C-SiC on a 6H-SiC {0001} plane using an Si-Sc solvent. The present study seeks to determine the polytype transition mechanism from 6H to 3C that occurs during growth. 3C-SiC grows by 2D nucleation, which gives rise to flat domains, whereas 6H-SiC grows by spiral growth originating from threading screw dislocations in the seed crystal. 3C-SiC expands laterally, covering the spiral growth of 6H-SiC. This preferential growth of 3C-SiC can be explained in terms of geometrical selection due to different growth rates of the two polytypes. We developed a simple model that considers the step height and the step density. It predicts that growth of 3C-SiC by 2D nucleation will have a higher growth rate than 6H-SiC spiral growth in a certain supersaturation range. (C) 2011 Elsevier B.V. All rights reserved.
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