期刊
JOURNAL OF CRYSTAL GROWTH
卷 331, 期 1, 页码 29-32出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2011.07.011
关键词
Island nucleation; Raman scattering; Si (111) substrate; AlGaN epilayers
资金
- Knowledge Innovation Engineering of Chinese Academy of Sciences [YYYJ-0701-02]
- National Nature Sciences Foundation of China [60890193, 60906006]
- State Key Development Program for Basic Research of China [2006CB604905, 2010CB327503]
- Chinese Academy of Sciences [ISCAS2008T01, ISCAS2009L01, ISCAS2009L02]
Up to 500 nm thick crack-free Al0.25Ga0.75N and Al0.32Ga0.68N epilayers have been grown on Si (111) substrates. The surface morphology of samples was investigated by an optical microscope and a scanning electron microscope (SEM). Pits and shale-like surface structure have been observed. XRD rocking curve measurements indicate the crystal quality of samples. The analyses show that the Al source flux is an important factor in growing AlGaN on Si (111). The information from the Micro-Raman spectra supported that Al atoms are gathered at nearby areas of the pits originated from the AlN/Si (111) interface in the initial stage of AlGaN growth. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
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