期刊
JOURNAL OF CRYSTAL GROWTH
卷 315, 期 1, 页码 229-232出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2010.06.036
关键词
Growth models; Metalorganic vapour phase epitaxy; Nitrides; Semiconducting aluminium compounds; AlGaN
The growth rates and aluminium contents of Al(x)Ga(1-x) layers grown in a close-coupled showerhead reactor were investigated as a function of growth pressure and chamber height during metal-organic vapour phase epitaxy. The data show strong non-linear dependencies due to nanoparticle formation in the gas-phase. Good agreement between the experimental data and modeling results is obtained when the contribution of both Ga- and Al-containing species to the gas-phase particle formation is considered. (C) 2010 Elsevier B.V. All rights reserved.
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