Bridgman growth and site occupation in LuAG:Ce scintillator crystals

LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation measurements were performed using 2 x 2 x 8 mm(3) shaped samples with Ce concentration in the range 0.05-0.55 at%. Essential improvement of performance was demonstrated in samples containing >= 0.2 at% of Ce; the light yield measured in LuAG:Ce (0.55 at%) was about 26000 ph/MeV, or close to that of LSO.(C) 2010 Elsevier B.V. All rights reserved.