期刊
JOURNAL OF CRYSTAL GROWTH
卷 312, 期 7, 页码 906-909出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2009.11.044
关键词
Magnetic fields; Physical vapor deposition processes; Oxides; Semiconducting II-VI materials
资金
- National Natural Science Foundation of China [10435060, 10675095]
- Korea Science and Engineering Foundation
Single-phase Zn0.95-xCuxLi0.05O thin films have been prepared on Pt (1 1 1)/Ti/SiO2 substrates by reactive magnetron sputtering method. The XRD, XPS and absorption measurements confirmed the polycrystalline nature of the films and the substitution of Zn2+ by Cu2+ ions. The sputtered Zn0.90Cu0.05Li0.05O film shows multiferroic properties exhibiting a saturated ferroelectric loop with a remanent polarization of 6 mu C/cm(2) and a saturated loop with a saturation magnetization of 0.43 mu(B)/Cu at room temperature. The origins of the ferromagnetism and ferroelectricity in these films are discussed. (C) 2009 Elsevier B.V. All rights reserved.
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