期刊
JOURNAL OF CRYSTAL GROWTH
卷 312, 期 15, 页码 2171-2174出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2010.04.043
关键词
MOVPE; Single crystal structure; GaN; Nitrides; Sapphire
资金
- Deutsche Forschungsgemeinschaft (DFG) [FOR 957, KN 889/4-1]
The growth of semipolar GaN on (1 0 (1) over bar 0) (m-plane) sapphire was investigated by metal-organic vapor phase epitaxy (MOVPE). Most of the layers were polycrystalline with (1 1 (2) over bar 2), {1 0 (1) over bar (3) over bar} and {1 0 (1) over bar 0} as the dominant surface orientations. For incomplete nitridation and recrystallization the {1 0 (1) over bar (3) over bar} orientation was dominant. However, the {1 0 (1) over bar (3) over bar} surface is rough due to twinned crystallites. Growth at lower temperatures and with reduced gas flow velocity results in predominantly {1 1 (2) over bar 2} oriented smooth layers. The orientation was also found to be influenced by the nitridation and recrystallization process. (C) 2010 Elsevier B.V. All rights reserved.
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