期刊
JOURNAL OF CRYSTAL GROWTH
卷 312, 期 3, 页码 378-381出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2009.11.015
关键词
Crystal structure; Growth models; Reflection high energy electron diffraction; Laser epitaxy; Inorganic compounds; Semiconducting materials
资金
- Ministry of Education, Culture, Sports, Science, and Technology of Japan
- National Institute of Advanced Industrial Science and Technology of Japan
- New Energy and Industrial Technology Development Organization of Japan
- Ministry of Economy, Trade, and Industry of Japan
We fabricated epitaxial SrB6 (1 0 0) thin films on ultrasmooth sapphire (alpha-Al2O3 single crystal) (0 0 0 1) substrates by laser molecular beam epitaxy. Reflection high-energy electron diffraction and X-ray diffraction measurements indicated the heteroepitaxial structure of SrB6 (1 0 0)/sapphire (0 0 0 1) with three domains of epitaxial relationship. The prepared films exhibited atomically stepwise surface morphology, similar to that of the ultrasmooth substrate used, with 0.2-nm-high atomic steps and similar to 70-nm-wide terraces. The SrB6 epitaxial thin films showed semiconducting behavior, with a resistivity of 4.8 Omega cm at room temperature. (C) 2009 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据