期刊
JOURNAL OF CRYSTAL GROWTH
卷 312, 期 8, 页码 1449-1452出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2009.12.041
关键词
Computer simulation; Growth models; Mass transfer; Surface structure; Atomic layer epitaxy
资金
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [0828410] Funding Source: National Science Foundation
A multiscale model of atomic layer deposition (ALD) inside a nanoporous material is developed in this paper. The overall model couples a lattice Monte Carlo simulator describing molecular-scale growth of the ALD film to a continuum description of the precursor transport within the nanopore. The multiscale simulation approach is used to study how intra-pore precursor depletion leads to nonuniform ALD films and to examine whether film properties, such as composition and surface roughness, are functions of position within the pore. (C) 2010 Elsevier BM. All rights reserved.
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