4.4 Article Proceedings Paper

Development of a multiscale model for an atomic layer deposition process

期刊

JOURNAL OF CRYSTAL GROWTH
卷 312, 期 8, 页码 1449-1452

出版社

ELSEVIER
DOI: 10.1016/j.jcrysgro.2009.12.041

关键词

Computer simulation; Growth models; Mass transfer; Surface structure; Atomic layer epitaxy

资金

  1. Div Of Chem, Bioeng, Env, & Transp Sys
  2. Directorate For Engineering [0828410] Funding Source: National Science Foundation

向作者/读者索取更多资源

A multiscale model of atomic layer deposition (ALD) inside a nanoporous material is developed in this paper. The overall model couples a lattice Monte Carlo simulator describing molecular-scale growth of the ALD film to a continuum description of the precursor transport within the nanopore. The multiscale simulation approach is used to study how intra-pore precursor depletion leads to nonuniform ALD films and to examine whether film properties, such as composition and surface roughness, are functions of position within the pore. (C) 2010 Elsevier BM. All rights reserved.

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