期刊
JOURNAL OF CRYSTAL GROWTH
卷 312, 期 12-13, 页码 1986-1991出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2010.03.020
关键词
Stresses; Doping; Chemical vapor deposition processes; Diamond
资金
- Program for New Century Excellent Talents in University (NCET)
- National Natural Science Foundation of China (NSFC) [50772041]
- Science and Technology Development Project of Jilin Province [20080509]
- MOST of China [2001CB711201]
- MOE of China
Growth orientation, crystalline structure, boron-doping distribution, and residual stresses of freestanding boron-doped chemical-vapor-deposited (CVD) diamond films have been comprehensively investigated. The introducing boron source of trimethylborate (B(OCH(3))(3)) in a doping level region favorably leads to a predominant [1 1 0] texture growth. By analyzing the asymmetry parameter q related to Fano-type interference obtained from micro-Raman spectroscopy, it is qualitatively deduced that the boron concentration in the films is spatially inhomogeneous in a large scale, either on the growth surface (between different grain facets and boundaries) or along the cross-section. The boron distribution on the cross-section is attributed to the increase of growing temperature on top surface and, consequently, the high-temperature-induced diffusion enhancement of boron atoms in diamond lattices as well as the boron contamination accumulated in CVD chamber. Combining X-ray diffraction (XRD) with sin(2)psi method, scanning electron microscopy, and Raman spectroscopy, we demonstrate that the residual stress is related not only to boron-doping level and inhomogeneous boron distribution but also to grain size, crystalline texture, and appearance of twins in the boron-doped diamond films. (C) 2010 Elsevier B.V. All rights reserved.
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