Luminescence properties of Eu2+-doped β-Si6-zAlzOzN8-z microcrystals fabricated by gas pressured reaction

Eu2+-doped beta-SiAlON microcrystals with compositions of EuxSi6-zAlzOzN8-z (x = 0.016, z = 0.1-2.0) were successfully fabricated by gas pressured reaction. The phase purity, microstructure, crystallinity and luminescent properties of Eu2+-doped beta-SiAlON microcrystals were investigated in detail. The prepared beta-SiAlON:Eu2+ phosphor crystals with Al-doping concentration of z < 1.0 showed pure single beta-SiAlON phase without secondary polytypoid phases. The prepared beta-SiAlON:Eu2+ microcrystals absorbed a UV-visible spectral region, and showed a single intense emission peak in a spectral range from 528 to 536 nm. The optimal conditions of Al3+-doping concentration (z value) for emission intensity, peak wavelength and bandwidth for application to light emitting diodes (LEDs) were discussed. (C) 2008 Elsevier B.V. All rights reserved.