期刊
JOURNAL OF CRYSTAL GROWTH
卷 311, 期 13, 页码 3380-3385出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2009.04.004
关键词
Atomic force microscopy; Surface structure; Metal-organic vapour phase epitaxy; Nitrides; Semiconducting indium compounds; Semiconducting ternary compounds
资金
- United Kingdom's Engineering and Physical Sciences Research Council
- Royal Society
- EPSRC [EP/H019324/1, EP/E035167/1, EP/G042330/1, TS/G001383/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G042330/1, EP/H019324/1, TS/G001383/1, EP/E035167/1] Funding Source: researchfish
An interesting recent development in the Group III nitrides is the growth of InAlN lattice matched to GaN, with applications in distributed Bragg reflectors (DBRs), high electron mobility transistors (HEMTs) and as etch-layers. This work presents a systematic study of the effects of changing the key growth conditions of ammonia flux and growth temperature in InAlN growth by metal-organic vapour phase epitaxy (MOPVE) and describes our current optimised parameter set. We also particularly concentrate on the details of surface morphology assessed by atomic force microscopy (AFM). The nanoscale surfaces are characterised by low hillocks and dislocation pits, while at a larger scale microscopic indium droplets are also present. However, these droplets are eliminated when the layers are capped with GaN. Other trends observed are that increasing the growth temperature will lower the indium incorporation approximately linearly at a rate of approximately 0.25% per degrees C, and that increasing the ammonia flux from 44.6 to 178.6 mmol min(-1) increased the indium incorporation, but further increases to 446 mmol min(-1) did not result in any further increase. (C) 2009 Elsevier B.V. All rights reserved.
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