期刊
JOURNAL OF CRYSTAL GROWTH
卷 311, 期 15, 页码 3813-3816出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2009.06.015
关键词
Nanostructures; Metal-organic vapor phase epitaxy; Selective epitaxy; Nanomaterials; Semiconducting III-V materials
资金
- JSPS
The influence of temperature on selective area (SA) InAs nanowire growth was investigated for metal-organic vapor phase epitaxy (MOVPE) using N-2 as the carrier gas and (111) B GaAs substrates. In contrast to the growth temperature range - below 600 degrees C - reported for hydrogen ambient, the optimal growth temperature between 650 and 700 degrees C was 100 K higher than the optimal ones for H-2 carrier gas. At these temperatures, nanowires with aspect ratios of about 80 and a symmetric hexagonal shape were obtained. The results found are attributed to the physical and chemical properties of the carrier gas. (c) 2009 Elsevier B.V. All rights reserved.
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