Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N2 carrier gas

The influence of temperature on selective area (SA) InAs nanowire growth was investigated for metal-organic vapor phase epitaxy (MOVPE) using N-2 as the carrier gas and (111) B GaAs substrates. In contrast to the growth temperature range - below 600 degrees C - reported for hydrogen ambient, the optimal growth temperature between 650 and 700 degrees C was 100 K higher than the optimal ones for H-2 carrier gas. At these temperatures, nanowires with aspect ratios of about 80 and a symmetric hexagonal shape were obtained. The results found are attributed to the physical and chemical properties of the carrier gas. (c) 2009 Elsevier B.V. All rights reserved.