Epitaxial growth of ZnO films on thin FeO(111) layers

Thin FeO(111) buffer layers prepared on Mo(110) substrate were used to grow ordered ZnO films under ultrahigh vacuum condition, and were in situ characterized by various surface analytical techniques. A chemical interaction between Zn (or ZnO) and FeO(111) can effectively lower the interfacial energy, which is in favor of an epitaxial growth of ZnO on FeO layers. Compared with the MgO(111) buffer layer used for the growth of ZnO(0001) on sapphire (0001) surface, the FeO(111) thin films might be a better one because it is more thermally stable. Our experimental results provide constructive information on the growth mechanism of ZnO-based materials, which is helpful for further understanding the growth mechanism of related oxide materials. (c) 2009 Elsevier B.V. All rights reserved.