4.4 Article

Growth behavior of faceted Si crystals at grain boundary formation

期刊

JOURNAL OF CRYSTAL GROWTH
卷 312, 期 1, 页码 19-23

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2009.09.055

关键词

Faceted interface; Solidification; Grain boundary; Silicon

资金

  1. New Energy and Industrial Technology Development Organization (NEDO)
  2. Ministry of Education, Culture, Sports, Science and Technology of Japan

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The growth behavior of faceted Si crystals in grain boundary formation during crystallization was studied by the in situ observation technique. We directly observed the transition of the shape of the growing interface just before the impingement of two crystals. It is found that when a crystal with a zigzag-shaped faceted interface encounters another crystal, {111} facet facing on the growing interface gradually disappears with the transition of the interfacial shape from zigzag to linear. This shape transition of the growing interface determines the grain boundary shape and grain boundary character. (C) 2009 Elsevier B.V. All rights reserved.

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