期刊
JOURNAL OF CRYSTAL GROWTH
卷 311, 期 11, 页码 3216-3219出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2009.03.026
关键词
Nanowires; Vapor phase epitaxy; Zinc oxide; Semiconducting II-VI materials
资金
- International Max Planck Research School for Science and Technology of Nanostructures (Nano-IMPRS) in Halle
The growth rate of ZnO nanowires grown epitaxially on GaN/sapphire substrates is studied. An inverse proportional relation between diameter and length of the nanowires is observed, i.e., nanowires with smaller diameters grow faster than larger ones. This unexpected result is attributed to surface diffusion of ZnO admolecules along the sidewalls of the nanowires. in addition, the unique c-axis growth of ZnO nanowires, which does not require a catalytic particle at the tip of the growing nanowires is discussed by taking into account polarity, surface free energy, and ionicity. Activation energies of the nanowire growth are determined as well. (C) 2009 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据