Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications

We report the OMVPE growth and characterization of InAsSb/InAs strain balanced multiple quantum wells lattice-matched to GaSb substrates for potential application as mid-infrared detectors for wavelengths beyond 4 mu m. Detailed transmission electron microscopy measurements were performed to evaluate the degree of Ga and Sb intermixing at the GaSb/InAsSb and InAs/InAsSb interfaces. Photoluminescence emission up to 5 mu m was observed for superlattice structures with only 15% antimony. The dependence of PL on wavelength is red shifted compared to expectations based on type I band alignment. (C) 2009 Elsevier B.V. All rights reserved.