期刊
JOURNAL OF CRYSTAL GROWTH
卷 310, 期 2, 页码 284-289出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2007.10.010
关键词
crystal structure; low temperature growth; atomic layer deposition; zinc acetate; zinc oxide
A method of controlling a preferred orientation of ZnO thin films grown by Atomic Layer Deposition (ALD) is discussed. The results for ALD films grown at low temperature with zinc acetate as a zinc precursor are presented. We demonstrate that to control a preferential growth mode one has to correlate growth temperature and separation time (so-called purging time) between pulses of precursors. (C) 2007 Elsevier B.V. All rights reserved.
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