期刊
JOURNAL OF CRYSTAL GROWTH
卷 310, 期 14, 页码 3303-3307出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2008.04.014
关键词
doping; defects; impurities; semiconducting II-VI materials
Ga-doped ZnO (GZO) thin films were prepared on glass substrates via pulsed laser deposition for window heater applications in the automobile industry. The structural, electrical, and optical properties of these films were investigated for their dependencies on Ga2O3 content and substrate temperature. GZO films with a resistivity of 2.14 x 10(-4) Omega cm and transparency above 90% in the visible range were obtained. GZO line heaters were patterned on glass substrates, and they heated rapidly from room temperature to 88.2 degrees C in 48 s at an applied voltage of 12 V. These results demonstrate the possibility of using GZO thin films as effective transparent heaters. (C) 2008 Elsevier B.V. All rights reserved.
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