期刊
JOURNAL OF CRYSTAL GROWTH
卷 310, 期 10, 页码 2508-2513出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2008.01.016
关键词
characterization; reflection high energy electron diffraction; X-ray diffraction; chemical vapor deposition; germanium
High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 x 10(5) cm(-2) was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was investigated. We demonstrated that the relatively higher temperature (350 degrees C) for the growth of Ge seed layer significantly improved the crystal quality and the Hall hole mobility of the Ge epilayer. (C) 2008 Elsevier B.V. All rights reserved.
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