期刊
JOURNAL OF CRYSTAL GROWTH
卷 310, 期 23, 页码 4843-4845出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2008.07.040
关键词
Metalorganic chemical vapor deposition; Selective epitaxy; Antimonides; Semiconducting gallium compounds
Dislocations of GaSb on GaAs substrates stripe-patterned with SiO(2) were reduced by using epitaxial lateral overgrowth (ELO) method. The properties of ELO GaSb layers were studied by means of transmission electron microscopy (TEM) and X-ray diffraction (XRD). In the TEM image with magnification of 15,000, dislocations were not observed with ELO GaSb, while its density was estimated to be 5 x 10(8) cm(-2) in seed region. Interfacial misfit arrays were formed at the openings of the mask with space of 54 angstrom, which is close to the value expected from 7.8% lattice mismatch between GaSb and GaAs substrate. The XRD rocking curves also indicate the Superior crystalline quality of ELO GaSb layers. (C) 2008 Elsevier B.V. All rights reserved.
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