期刊
出版社
ELSEVIER
DOI: 10.1016/j.nima.2015.04.025
关键词
Silicon; Fast detector; Low gain; APD; Charge multiplication
Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simulations show that these sensors, the so-called Ultra-fast Silicon Daectors (UFSD), will be able to reach a time resolution factor of 10 better than that of traditional silicon sensors. (C) 2015 Elsevier B.V. All rights reserved,
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