4.4 Article

Revisit of large-gap Si-16 clusters encapsulating group-IV metal atoms (Ti, Zr, Hf)

期刊

JOURNAL OF COMPUTATIONAL CHEMISTRY
卷 39, 期 27, 页码 2268-2272

出版社

WILEY
DOI: 10.1002/jcc.25545

关键词

CCSD(T); density functional calculations; doped silicon clusters; ground states; photoelectron spectrum

资金

  1. National Natural Science Foundation of China [11574040, 11504041]
  2. Fundamental Research Funds for the Central Universities of China [DUT17LAB19]
  3. Supercomputing Center of Dalian University of Technology

向作者/读者索取更多资源

Doped clusters by Si-16 cage encapsulating group-IV metal atoms (M@Si-16, M = Ti, Zr and Hf) are computationally investigated by both density functional theory (DFT) and high-level CCSD(T) method. Their low-energy structures are globally searched using a genetic algorithm based on DFT. The ground state structures of neutral and anionic M@Si-16 are determined by calculating the vertical and adiabatic detachment energies and comparing them with the experimental data. For neutral Ti@Si-16, the Frank-Kasper (FK) deltahedron with T-d symmetry and distorted FK isomer with C-3v symmetry are nearly degenerate as the ground state and may coexist in laboratory, while the distorted FK isomer is the most probable structure for Ti@Si-16(-) anion. For neutral and anionic Zr@Si-16 and Hf@Si-16 clusters, the ground states at finite temperatures up to 300 K are the fullerene-like D-4d bitruncated square trapezohedron. These theoretical results establish a more complete picture for the most stable structures of M@Si-16 clusters, which possess large gaps and may serve as building blocks for electronic and optoelectronic applications.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据