AACVD of Cu2-xS, In2S3 and CuInS2 thin films from [Cu(iBu2PS2)(PPh3)2] and [In(iBu2PS2)3] as single source precursors

In((Bu2PS2)-Bu-i)(3)] and [Cu((Bu2PS2)-Bu-i)(PPh3)(2)] complexes have been synthesized and used as single source precursors to deposit thin films of cubic In2S3 and Cu2-xS respectively on glass substrates by aerosol-assisted chemical vapor deposition (AACVD) at 350-500 degrees C. Thin films of CuInS2 have also been deposited by using 1 : 1 molar ratio of [In((Bu2PS2)-Bu-i)(3)] and [Cu((Bu2PS2)-Bu-i)(PPh3)(2)]. The deposited thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray diffraction (EDX) techniques. Deposition of films at different temperatures showed significant variation in stoichiometry and microstructure. The CuInS2 thin films were ultrasonicated in toluene along with dodecanthiol for 3 hours to obtain a suspension of CuInS2 nanocrystallites with a diameter of ca. 18 +/- 2 nm and a band gap of 1.59 eV.