Hysteresis reversion in graphene field-effect transistors

To enhance performances of graphene/SiO2 based field-effect transistors (FETs), understanding of the transfer of carriers through the graphene/SiO2 interface is crucial. In this paper, we have studied the temperature dependent transfer characters of graphene FETs. Hysteresis loop is shown to be dominated by trapping/detrapping carriers through the graphene/SiO2 interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3460798]