4.7 Article

The electron affinity of gallium nitride (GaN) and digallium nitride (GaNGa): The importance of the basis set superposition error in strongly bound systems

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Chemistry, Physical

Improved theoretical calculations of InN in its X3E- ground state and in the first 3II excited state

Lukas Demovic et al.

CHEMICAL PHYSICS LETTERS (2007)

Article Chemistry, Physical

Theoretical investigation on the electronic and geometric structure of GaN2+ and GaN4+

Demeter Tzeli et al.

JOURNAL OF PHYSICAL CHEMISTRY A (2007)

Letter Chemistry, Physical

Molecular constants of aluminum monohalides: Caveats for computations of simple inorganic molecules

Magdolna Hargittai et al.

JOURNAL OF PHYSICAL CHEMISTRY A (2007)

Article Chemistry, Physical

Spectroscopic constants and potential energy curves of gallium nitride (GaN) and ions:: GaN+ and GaN-

Pablo A. Denis et al.

CHEMICAL PHYSICS LETTERS (2006)

Article Chemistry, Physical

The low-lying electronic states of the GaN molecule

LT Ueno et al.

CHEMICAL PHYSICS LETTERS (2005)