期刊
JOURNAL OF APPLIED SPECTROSCOPY
卷 77, 期 3, 页码 371-377出版社
SPRINGER
DOI: 10.1007/s10812-010-9341-5
关键词
chalcopyrite semiconductors; chemical composition; absorption coefficient; x-ray diffraction analysis; structure
类别
资金
- EPSRC [EP/E026451/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/E026451/1] Funding Source: researchfish
The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap E-g for this material in the 1.05-1.72 eV spectral range at 4.2 K.
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