期刊
NATURE NANOTECHNOLOGY
卷 10, 期 4, 页码 333-338出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/NNANO.2015.18
关键词
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资金
- National Research Foundation (NRF), Prime Minister's Office, Singapore [NRF-CRP12-2013-01, NRF-CRP4-2008-06]
- NRF [NRF-2013R1A2A2A01013188, NRF-2011-0030046, NRF-2013R1A2A2A05006237]
- MEST Pioneer Research Center Program [2011-0027905]
- MOTIE [10044723]
- NCRI [2009-0081576]
- MPK Program through the NRF - Ministry of Science, Information Communication Technology, and Future Planning, Korea (MSIP) [2011-0031558]
- Pohang University of Science and Technology
- MSIP
- Korea Evaluation Institute of Industrial Technology (KEIT) [10044723] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2011-0030046, 2011-0031558, 10Z20130000023, 2013R1A2A2A05006237, 2011-0027905, 2013R1A2A2A01013188] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Spin transfer torques allow the electrical manipulation of magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to spin-orbit torques, which are a more powerful tool for controlling magnetization and can enrich device functionalities. The engineering of spin-orbit torques, based mostly on the spin Hall effect, is being intensely pursued. Here, we report that the oxidation of spin-orbit-torque devices triggers a new mechanism of spin-orbit torque, which is about two times stronger than that based on the spin Hall effect. We thus introduce a way to engineer spin-orbit torques via oxygen manipulation. Combined with electrical gating of the oxygen level, our findings may also pave the way towards reconfigurable logic devices.
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